Semiconductor Manufacturing Process

Never miss even the slightest fluctuation. Achieve stable manufacturing processes with NDK's QCM technology.

Minor Changes During Manufacturing Can Determine Quality Outcomes

In semiconductor front-end manufacturing, minute process variations significantly impact product quality and yield. To stabilize processes andmaintain reproducibility, real-time awareness of what is happening during processing is increasingly critical. However, changes during processing are not always clearly visible, requiring advanced judgment based on experience and intuition when assessing equipment status or process progression.
NDK's Real-Time Process Monitor utilizes QCM (Quartz Crystal Microbalance) technology to capture changes within the process chamber in real time with high sensitivity. It provides previously hard-to-detect changes as quantified information. This supports process stabilization and decision-making, contributing to higher reproducibility and quality assurance.

The Role of Real-Time Process Monitors in Semiconductor Manufacturing (Front-End) Processes

Primary Semiconductor Manufacturing (Front-End) Processes

In processes where the state of the process or the progression of reactions affects quality, monitoring via real-time process monitors is particularly effective.
For the three processes of deposition, etching, and ashing (resist stripping), capturing in-process variations in real time contributes to yield improvement, optimization of total turnaround time (TAT), and predictive maintenance.

Film Deposition (PVD/CVD/ALD)

Monitors Environmental Changes During Deposition to Optimize and Stabilize the Process.

Common Challenges

Difficulty detecting component abnormalities or particle generation within the precursor supply system

Challenges in assessing target wear and chamber deposition conditions

Inability to directly detect reactive material removal, leading to excessive cleaning

Abnormalities during deposition often only detected after process completion

Difficulty identifying factors causing variation in deposition rate and film thickness between wafers and across equipment, and ensuring reproducibility

Expected Effects of the Real-Time Process Monitor

Real-time monitoring of chamber environment for process optimization

Detection of precursor supply abnormalities during processing

Optimization of chamber cleaning and particle minimization

Visualization of chamber conditions for optimized maintenance timing

Real-time monitoring of film thickness variations

High-precision detection of initial reaction changes

Providing data for analyzing performance variation factors

【 Film Thickness Measurement Concept Using Chamber Wall Deposition Thickness Measurement 】

By measuring the thickness deposited on the chamber wall, the actual target film thickness is measured relatively.

Etching

Monitor Environmental Changes During Etching to Optimize and Stabilize the Process

Common Challenges

Reactive residue buildup on chamber walls causes etch performance fluctuations

Reactive residue accumulation increases particles on wafers

Reactive residue removal cannot be directly detected, leading to excessive cleaning

Difficult to analyze causes and implement countermeasures for performance variations between wafers and equipment

Small etch areas make endpoint detection via luminescence difficult

Real-time detection during process anomalies is challenging

Expected Effects of the Real-Time Process Monitor

Direct real-time monitoring of reactive material deposition and removal

Optimization of chamber cleaning and particle minimization

Visualization of chamber conditions and optimization of maintenance timing

Provides data for analyzing factors causing performance variations between wafers and between devices

Applicable to APC (Advanced Process Control) by monitoring behavior during etching

Provides material data for determining etch end points

Detects abnormalities through real-time monitoring of the chamber environment

【 Etching Equipment Measurement Concept Diagram 】

【 Chamber Wall Deposition Thickness Measurement Concept 】

By measuring the thickness deposited on the chamber inner wall, the actual target film thickness is measured relatively.

Ashing (Resist Stripping)

Monitor Environmental Changes During Ashing to Optimize and Stabilize the Process

Common Challenges

No clear indicator for end-of-ash, leading to under-processing or over-processing

Fluctuations in plasma or equipment conditions affect removal performance

Resist residue may cause defects in subsequent processes

Expected Effects of the Real-Time Process Monitor

Detect process changes in real time and clearly determine the ashing endpoint

Indirectly monitor plasma fluctuations

Achieve optimized processing times and stable yield

Provide data necessary for overhaul decisions

Example of Ashing Process Evaluation

Case Study: MEIDEN NANOPROCESS INNOVATIONS, INC.

【 Installation on Ashing Equipment 】

【 Ashing Process Chamber
Measurement Concept Diagram 】

【 Measurement Evaluation 】

Results
Real-time measurement of OH radical generation levels has been demonstrated.​
Effective for process development, such as measuring OH radical distribution on wafers and verifying pure ozone mixing ratios!​
Effective as a real-time monitor for resist removal in manufacturing process monitoring!

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For inquiries or technical questions regarding the QCM Real-Time Process Monitor, please feel free to contact us.

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QCM Real-Time Process Monitor

Semiconductor Manufacturing Process

Moisture Measurement

Product Lineup

Papers and Academic Conferences

What is QCM?
　- Basic Principles and NDK's High-Precision Sensor Technology -

QCM Research Achievements

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